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Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

✍ Scribed by T.J. Anderson; F. Ren; J. Kim; J. Lin; M. Hlad; B.P. Gila; L. Voss; S.J. Pearton; P. Bove; H. Lahreche; J. Thuret

Book ID: 107455060
Publisher: Springer US
Year: 2007
Tongue: English
Weight: 361 KB
Volume: 37
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-007-0326-y

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