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High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

✍ Scribed by Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

Book ID: 118134466
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 363 KB
Volume: 80
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1461420

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