✦ LIBER ✦

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

✍ Scribed by Byung-Jae Kim; Hong-Yeol Kim; Jihyun Kim; Soohwan Jang

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 554 KB
Volume: 326
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.098

No coin nor oath required. For personal study only.

✦ Synopsis

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 Â 100 mm 2 gate were irradiated with a dose of 2.8 Â 10 11 cm À 2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.

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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we