✦ LIBER ✦
Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors
✍ Scribed by M. Marso; J. Bernát; P. Javorka; A. Fox; P. Kordoš
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 68 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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