𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC

✍ Scribed by Kumar, V. ;Kuliev, A. ;Schwindt, R. ;Simin, G. ;Yang, J. ;Asif Khan, M. ;Adesida, I.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
103 KB
Volume
194
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Microwave Simulation on the Performance
✍ Deng, J. ;IΓ±iguez, B. ;Shur, M. S. ;Gaska, R. ;Khan, M. A. ;Yang, J. W. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 119 KB πŸ‘ 2 views

We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign

Reliability Evaluation of High Power AlG
✍ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 86 KB πŸ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we