High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC
β Scribed by Kumar, V. ;Kuliev, A. ;Schwindt, R. ;Simin, G. ;Yang, J. ;Asif Khan, M. ;Adesida, I.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 103 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign
Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we