✦ LIBER ✦

High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

✍ Scribed by Neuberger, R. ;M�ller, G. ;Ambacher, O. ;Stutzmann, M.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 88 KB
Volume: 185
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200105)185:1<85::aid-pssa85>3.0.co;2-u

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-Performance AlGaN/GaN High Electron

High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC

✍ Kumar, V. ;Kuliev, A. ;Schwindt, R. ;Simin, G. ;Yang, J. ;Asif Khan, M. ;Adesida 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 1 views

Ion-Induced Modulation of Channel Curren

Ion-Induced Modulation of Channel Currents in AlGaN/GaN High-Electron-Mobility Transistors

✍ Neuberger, R. ;M�ller, G. ;Ambacher, O. ;Stutzmann, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 76 KB 👁 1 views