✦ LIBER ✦

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

✍ Scribed by Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastman, L.F.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 86 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200111)188:1<203::aid-pssa203>3.0.co;2-c

No coin nor oath required. For personal study only.

✦ Synopsis

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we present the results of reliability tests performed on undoped AlGaN/GaN HEMTs on SiC under dc and rf stress conditions. Undoped AlGaN/GaN HEMTs on SiC substrates have been submitted to on-wafer dc and rf stress conditions at a room temperature and the degradation in device performance induced by hot electron and thermal effects have been observed.

📜 SIMILAR VOLUMES

Growth and Characterisation of AlGaN/GaN

Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

✍ Kalisch, H. ;Dikme, Y. ;Gerstenbrandt, G. ;Alam, A. ;Szymakowski, A. ;Klockenhof 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB 👁 2 views

Fabrication and Performance of AlGaN/GaN

Fabrication and Performance of AlGaN/GaN HEMTs on (111) Si Substrates

✍ Javorka, P. ;Alam, A. ;Marso, M. ;Wolter, M. ;Fox, A. ;Heuken, M. ;Kordo?, P. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB 👁 1 views

Dependence of Device Characteristics on

Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs

✍ Shelton, B. S. ;Wong, M. M. ;Zhu, T.-G. ;Eiting, C. J. ;Lambert, D. J. H. ;Lin, 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 151 KB 👁 2 views

Growth of GaN/AlGaN HFETs on SiC Substra

Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

✍ Webb, J.B. ;Tang, H. ;Bardwell, J.A. ;Liu, Y. ;Lapointe, J. ;MacElwee, T. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 184 KB 👁 2 views

Microwave Simulation on the Performance

Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors

✍ Deng, J. ;Iñiguez, B. ;Shur, M. S. ;Gaska, R. ;Khan, M. A. ;Yang, J. W. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 119 KB 👁 2 views

We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign