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Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

✍ Scribed by Webb, J.B. ;Tang, H. ;Bardwell, J.A. ;Liu, Y. ;Lapointe, J. ;MacElwee, T.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
184 KB
Volume
194
Category
Article
ISSN
0031-8965

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