Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs

✍ Scribed by Shelton, B. S. ;Wong, M. M. ;Zhu, T.-G. ;Eiting, C. J. ;Lambert, D. J. H. ;Lin, D. E. ;Dupuis, R. D.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 151 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<213::aid-pssa213>3.0.co;2-9