Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma
✦ LIBER ✦
Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates
✍ Scribed by Kalisch, H. ;Dikme, Y. ;Gerstenbrandt, G. ;Alam, A. ;Szymakowski, A. ;Klockenhoff, H. ;Rieckmann, C. ;Heuken, M. ;Jansen, R.H. ;Javorka, P. ;Marso, M. ;Fox, A. ;Kordos, P. ;L�th, H.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 154 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we
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