Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

✍ Scribed by Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;W�rfl, J. ;M�ller, S. ;K�hler, K.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 94 KB
• Volume: 194
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200212)194:2<460::aid-pssa460>3.0.co;2-r

✦ Synopsis

Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f max varies from 27-79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8 W is achieved at 2 GHz.