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Plasma-Assisted MBE Growth of GaN on HVPE-GaN Substrates

✍ Scribed by Rinta-Möykky, A. ;Laukkanen, P. ;Lehkonen, S. ;Laaksonen, S. ;Dekker, J. ;Tukiainen, A. ;Uusimaa, P. ;Pessa, M.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
136 KB
Volume
176
Category
Article
ISSN
0031-8965

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✍ Sánchez-García, M. A. ;Naranjo, F. B. ;Pau, J. L. ;Jiménez, A. ;Calleja, E. ;Muñ 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 302 KB 👁 1 views

This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic