✦ LIBER ✦

Homoepitaxial Growth and Luminescence Characterization of GaN Epilayer by RF-MBE on MOCVD-Grown GaN Substrate

✍ Scribed by Kurai, S. ;Kubo, S. ;Okazaki, T. ;Manabe, S. ;Sugita, T. ;Kawabe, A. ;Yamada, Y. ;Taguchi, T.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 159 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<459::aid-pssa459>3.0.co;2-z

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Morphological and Optical Characterizati

Morphological and Optical Characterization of GaN/AlN Heterostructures Grown on Si(111) Substrates by MBE

✍ R. Rinaldi; S. Antonaci; M. Anni; M. Lomascolo; R. Cingolani; A. Botchkarev; H. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 210 KB 👁 2 views

Selective Area Growth of GaN on SiC Subs

Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE

✍ Tang, H. ;Bardwell, J.A. ;Webb, J.B. ;Rolfe, S. ;Moisa, S. ;Fraser, J. ;Raymond, 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 115 KB

MOCVD Growth and Characterization of GaN

MOCVD Growth and Characterization of GaN Films with Composite Intermediate Layer Buffer on Si Substrate

✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 169 KB 👁 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1± ±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality

Growth and Characterization of GaN Epila

Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer Grown on Si(111) Substrate

✍ Kang, J.H. ;Kwon, M.K. ;Rho, J.I. ;Yang, J.W. ;Lim, K.Y. ;Nahm, K.S. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 116 KB 👁 2 views

Effects of Substrate Pretreatment and Bu

Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

✍ Zhang, W. ;Alves, H.R. ;Blaesing, J. ;Riemann, T. ;Heuken, M. ;Veit, P. ;Pfister 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 1 views

Growth and Characterization of InN Heter

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE

✍ T. Yodo; H. Ando; D. Nosei; Y. Harada 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 1 views