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Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE

โœ Scribed by Tang, H. ;Bardwell, J.A. ;Webb, J.B. ;Rolfe, S. ;Moisa, S. ;Fraser, J. ;Raymond, S. ;Sikora, P.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
115 KB
Volume
188
Category
Article
ISSN
0031-8965

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Selective Growth of Cubic GaN on Pattern
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl