Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl
β¦ LIBER β¦
Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy
β Scribed by Kawaguchi, Y. ;Honda, Y. ;Yamaguchi, Y. ;Sawaki, N. ;Hiramatsu, K.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 171 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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