Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl
Optical Properties of Cubic GaN Grown on 3C-SiC (100) Substrates by Metalorganic Vapor Phase Epitaxy
โ Scribed by Wu, J. ;Yaguchi, H. ;Zhang, B.P. ;Segawa, Y. ;Onabe, K. ;Shiraki, Y.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 128 KB
- Volume
- 180
- Category
- Article
- ISSN
- 0031-8965
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