Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we
โฆ LIBER โฆ
Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
โ Scribed by H. Yaguchi; J. Wu; H. Akiyama; M. Baba; K. Onabe; Y. Shiraki
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 136 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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