๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Study of Phase-Separated InGaN Grown by Metalorganic Vapor Phase Epitaxy

โœ Scribed by P. Li; S.J. Chua; G. Li; W. Wang; X.C. Wang; Y.P. Guo


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
188 KB
Volume
216
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Homoepitaxial Growth of ZnO by Metalorga
โœ K. Ogata; T. Kawanishi; K. Sakurai; S.-W. Kim; K. Maejima; Sz. Fujita; Sg. Fujit ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 280 KB ๐Ÿ‘ 1 views

a), T. Kawanishi (b), K. Sakurai (b), S.-W. Kim (b), K. Maejima (b), Sz. Fujita (b, c), and Sg. Fujita (b) (a) Venture Business

Substrate Misorientation Dependence of t
โœ Nagayama, A. ;Katayama, R. ;Nakadan, N. ;Miwa, K. ;Yaguchi, H. ;Wu, J. ;Onabe, K ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 208 KB ๐Ÿ‘ 2 views

The metalorganic vapor phase epitaxial (MOVPE) growth of cubic GaN layers on misoriented GaAs (001) substrates, the faces of which were tilted from (001) toward [1 " 10] or [110] by 4 , was performed in order to investigate the effect of the substrate misorientation on the inclusion of hexagonal pha

Defect States in Cubic GaN Epilayer Grow
โœ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 89 KB ๐Ÿ‘ 1 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we