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Anisotropy in Electron Mobility and Microstructure of GaN Grown by Metalorganic Vapor Phase Epitaxy

✍ Scribed by Feng, D. P. ;Zhao, Y. ;Zhang, G. Y.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 265 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199912)176:2<1003::aid-pssa1003>3.0.co;2-g

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