✦ LIBER ✦

Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

✍ Scribed by Ohkawa, K. ;Hirako, A. ;Yoshitani, M.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 201 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<621::aid-pssa621>3.0.co;2-v

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✦ Synopsis

Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achieving high quality layers compared to one-and three-flow methods. A GaN layer with high Hall mobility of 360 cm 2 /Vs is obtained by two-flow MOVPE growth despite no low-temperature buffer layer. The V/III decomposition ratio of NH 2 /GaCH 3 is calculated by CFD simulation in gas phase just on substrate surface. The V/III ratio is in a narrow region to get high-mobility samples.

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