✦ LIBER ✦

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

✍ Scribed by Feltin, E. ;Beaumont, B. ;La�gt, M. ;de Mierry, P. ;Venn�gu�s, P. ;Leroux, M. ;Gibart, P.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 148 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<531::aid-pssa531>3.0.co;2-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of GaN Layers by One-, Two-, and

Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

✍ Ohkawa, K. ;Hirako, A. ;Yoshitani, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 201 KB 👁 2 views

Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achievin

Selective Area Growth of GaN on Stripe-P

Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Honda, Y. ;Yamaguchi, Y. ;Sawaki, N. ;Hiramatsu, K. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

Growth of InGaN Alloy on Cubic GaN by Me

Growth of InGaN Alloy on Cubic GaN by Metalorganic Vapor-Phase Epitaxy

✍ Nakadaira, A. ;Tanaka, H. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB 👁 1 views

High Quality GaN Layers Grown by Metalor

High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates

✍ Strittmatter, A. ;Krost, A. ;Bläsing, J. ;Bimberg, D. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 155 KB 👁 1 views

Influence of Ambient Gas on the Epitaxia

Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy

✍ Kawaguchi, Y. ;Nambu, S. ;Yamaguchi, M. ;Sawaki, N. ;Miyake, H. ;Hiramatsu, K. ; 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 258 KB 👁 2 views

Defect States in Cubic GaN Epilayer Grow

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

✍ Xu, S.J. ;Or, C.T. ;Li, Q. ;Zheng, L.X. ;Xie, M.H. ;Tong, S.Y. ;Yang, Hui 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 89 KB 👁 1 views

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we