In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and
High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates
✍ Scribed by Strittmatter, A. ;Krost, A. ;Bläsing, J. ;Bimberg, D.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 155 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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