✦ LIBER ✦

High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer

✍ Scribed by Hageman, P.R. ;Haffouz, S. ;Kirilyuk, V. ;Grzegorczyk, A. ;Larsen, P.K.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 91 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<523::aid-pssa523>3.0.co;2-r

No coin nor oath required. For personal study only.

✦ Synopsis

We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the GaN epilayers. The insertion of a Si x N y intermediate layer significantly increases the optical and structural properties. It results in a reduction of the D 0 X FWHM to 10 meV and in a 2.5-fold increase of its luminescence intensity. The FWHM of symmetric and asymmetric w-scans are reduced from 832 to 669 arcsec and from 702 to 547 arcsec, respectively.

📜 SIMILAR VOLUMES

High-Quality GaN on Si Substrate Using A

High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

✍ Ishikawa, H. ;Zhao, G. Y. ;Nakada, N. ;Egawa, T. ;Soga, T. ;Jimbo, T. ;Umeno, M. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 165 KB

MOCVD Growth and Characterization of GaN

MOCVD Growth and Characterization of GaN Films with Composite Intermediate Layer Buffer on Si Substrate

✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 169 KB 👁 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1± ±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality

Growth and Characterization of GaN Epila

Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer Grown on Si(111) Substrate

✍ Kang, J.H. ;Kwon, M.K. ;Rho, J.I. ;Yang, J.W. ;Lim, K.Y. ;Nahm, K.S. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 116 KB 👁 2 views