We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga
β¦ LIBER β¦
High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer
β Scribed by Ishikawa, H. ;Zhao, G. Y. ;Nakada, N. ;Egawa, T. ;Soga, T. ;Jimbo, T. ;Umeno, M.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 165 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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