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Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching

✍ Scribed by Weyher, J. L. ;Zauner, A. R. A. ;Brown, P. D. ;Karouta, F. ;Barcz, A. ;Wojdak, M. ;Porowski, S.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
193 KB
Volume
176
Category
Article
ISSN
0031-8965

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