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Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer Grown on Si(111) Substrate

✍ Scribed by Kang, J.H. ;Kwon, M.K. ;Rho, J.I. ;Yang, J.W. ;Lim, K.Y. ;Nahm, K.S.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 116 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<527::aid-pssa527>3.0.co;2-b

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