✦ LIBER ✦

Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy

✍ Scribed by Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofmann, D.M. ;Blaesing, J. ;Krost, A. ;Christen, J. ;Meyer, B.K.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 99 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200111)188:1<453::aid-pssa453>3.0.co;2-l

No coin nor oath required. For personal study only.

✦ Synopsis

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.

📜 SIMILAR VOLUMES

In-Situ Monitoring of GaN Growth by Hydr

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

✍ Martin, D. ;Carlin, J.F. ;Wagner, V. ;B�hlmann, H.J. ;Ilegems, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB 👁 1 views

Growth of GaN Nanorods by a Hydride Vapo

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

✍ H.-M. Kim; D.S. Kim; Y.S. Park; D.Y. Kim; T.W. Kang; K.S. Chung 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 136 KB 👁 1 views

Growth of Submicron AlGaN/GaN/AlGaN Hete

Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

✍ Tsvetkov, D. ;Melnik, Yu. ;Davydov, A. ;Shapiro, A. ;Kovalenkov, O. ;Lam, J.B. ; 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 106 KB 👁 2 views

Modeling Study of Hydride Vapor Phase Ep

Modeling Study of Hydride Vapor Phase Epitaxy of GaN

✍ Karpov, S. Yu. ;Zimina, D. V. ;Makarov, Yu. N. ;Beaumont, B. ;Nataf, G. ;Gibart, 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 1 views

Growth of GaN Layers by One-, Two-, and

Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

✍ Ohkawa, K. ;Hirako, A. ;Yoshitani, M. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 201 KB 👁 2 views

Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achievin

GaN Nanorods Doped by Hydride Vapor-Phas

GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties

✍ H.-M. Kim; Y.-H. Cho; T.W. Kang 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB