✦ LIBER ✦

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

✍ Scribed by H.-M. Kim; D.S. Kim; Y.S. Park; D.Y. Kim; T.W. Kang; K.S. Chung

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 136 KB
Volume: 14
Category: Article
ISSN: 0935-9648
DOI: 10.1002/1521-4095(20020705)14:13/14<991::aid-adma991>3.0.co;2-l

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In-Situ Monitoring of GaN Growth by Hydr

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

✍ Martin, D. ;Carlin, J.F. ;Wagner, V. ;B�hlmann, H.J. ;Ilegems, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB 👁 1 views

Flow Modulation Growth of Thick GaN by H

Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy

✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.

GaN Nanorods Doped by Hydride Vapor-Phas

GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties

✍ H.-M. Kim; Y.-H. Cho; T.W. Kang 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB

Growth of Submicron AlGaN/GaN/AlGaN Hete

Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

✍ Tsvetkov, D. ;Melnik, Yu. ;Davydov, A. ;Shapiro, A. ;Kovalenkov, O. ;Lam, J.B. ; 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 106 KB 👁 2 views

Modeling Study of Hydride Vapor Phase Ep

Modeling Study of Hydride Vapor Phase Epitaxy of GaN

✍ Karpov, S. Yu. ;Zimina, D. V. ;Makarov, Yu. N. ;Beaumont, B. ;Nataf, G. ;Gibart, 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 1 views

Self-Separation of Freestanding GaN from

Self-Separation of Freestanding GaN from Sapphire Substrates by Hydride Vapor Phase Epitaxy

✍ Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 1 views

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca