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Self-Separation of Freestanding GaN from Sapphire Substrates by Hydride Vapor Phase Epitaxy

✍ Scribed by Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 153 KB
Volume: 194
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200212)194:2<563::aid-pssa563>3.0.co;2-b

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✦ Synopsis

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, because of thermal stress and lattice mismatch between GaN and sapphire. The size of the freestanding GaN wafers was 23 mm Â 22 mm. The threading dislocation density at the top surface was 10 6 cm --2 to $10 7 cm --2 .

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