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Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation

✍ Scribed by Oshima, Y. ;Eri, T. ;Shibata, M. ;Sunakawa, H. ;Usui, A.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 114 KB
Volume: 194
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200212)194:2<554::aid-pssa554>3.0.co;2-b

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