Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation

✍ Scribed by Usui, A. ;Ichihashi, T. ;Kobayashi, K. ;Sunakawa, H. ;Oshima, Y. ;Eri, T. ;Shibata, M.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 103 KB
• Volume: 194
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200212)194:2<572::aid-pssa572>3.0.co;2-b