We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.
✦ LIBER ✦
In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy
✍ Scribed by Martin, D. ;Carlin, J.F. ;Wagner, V. ;B�hlmann, H.J. ;Ilegems, M.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 113 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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