𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling Study of Hydride Vapor Phase Epitaxy of GaN

✍ Scribed by Karpov, S. Yu. ;Zimina, D. V. ;Makarov, Yu. N. ;Beaumont, B. ;Nataf, G. ;Gibart, P. ;Heuken, M. ;Jürgensen, H. ;Krishnan, A.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
139 KB
Volume
176
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Flow Modulation Growth of Thick GaN by H
✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.

Self-Separation of Freestanding GaN from
✍ Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 1 views

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca