Modeling Study of Hydride Vapor Phase Epitaxy of GaN
✍ Scribed by Karpov, S. Yu. ;Zimina, D. V. ;Makarov, Yu. N. ;Beaumont, B. ;Nataf, G. ;Gibart, P. ;Heuken, M. ;Jürgensen, H. ;Krishnan, A.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 139 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.
Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca