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Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

✍ Scribed by Tsvetkov, D. ;Melnik, Yu. ;Davydov, A. ;Shapiro, A. ;Kovalenkov, O. ;Lam, J.B. ;Song, J.J. ;Dmitriev, V.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
106 KB
Volume
188
Category
Article
ISSN
0031-8965

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Flow Modulation Growth of Thick GaN by H
✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 99 KB πŸ‘ 1 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.