We report the growth, fabrication and characterization of high-quality AlGaN/GaN solar-blind p-i-n and MSM photodetectors by low-pressure metalorganic chemical vapor deposition (MOCVD). The epitaxial layers were grown on double-polished c-plane (0001) sapphire substrates to allow for back-side illum
β¦ LIBER β¦
Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition
β Scribed by C.J. Eiting; D.J.H. Lambert; H.K. Kwon; B.S. Shelton; M.M. Wong; T.G. Zhu; R.D. Dupuis
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 144 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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