We report on time-integrated and time-resolved photoluminescence (PL) measurements in 80 mm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well-resolved emissions assigned to the neutral-donor-bound
Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
โ Scribed by Zhang, W. ;Alves, H.R. ;Blaesing, J. ;Riemann, T. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Gregor, R. ;Hofmann, D.M. ;Krost, A. ;Christen, J. ;Meyer, B.K.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 102 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achievin
The metalorganic vapor phase epitaxial (MOVPE) growth of cubic GaN layers on misoriented GaAs (001) substrates, the faces of which were tilted from (001) toward [1 " 10] or [110] by 4 , was performed in order to investigate the effect of the substrate misorientation on the inclusion of hexagonal pha