Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy
β Scribed by Kirilyuk, V. ;Hageman, P.R. ;Christianen, P.C.M. ;Corbeek, W.H.M. ;Zielinski, M. ;Macht, L. ;Weyher, J.L. ;Larsen, P.K.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 113 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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We report on time-integrated and time-resolved photoluminescence (PL) measurements in 80 mm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well-resolved emissions assigned to the neutral-donor-bound
We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.