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Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

✍ Scribed by Huang, D. ;Visconti, P. ;Reshchikov, M.A. ;Yun, F. ;King, T. ;Baski, A.A. ;Litton, C.W. ;Jasinski, J. ;Liliental-Weber, Z. ;Morko�, H.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 115 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<571::aid-pssa571>3.0.co;2-f

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