GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Γ 10 9 cm --2 for edge dislocations and 1 Γ 1
β¦ LIBER β¦
Anisotropic Superconductivity of InN Grown by Molecular Beam Epitaxy on Sapphire (0001)
β Scribed by T. Inushima; V.V. Vecksin; S.V. Ivanov; V.Y. Davydov; T. Sakon; M. Motokawa
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 80 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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