✦ LIBER ✦

Preferential Growth Mode of Cubic GaN by Metalorganic Molecular Beam Epitaxy on Sapphire (0001) Substrates

✍ Scribed by Suda, J. ;Kurobe, T. ;Masuda, T. ;Matsunami, H.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 152 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<503::aid-pssa503>3.0.co;2-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of GaN on SiC(0001) by Molecular

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

✍ Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hs 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB 👁 1 views

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1

Selective Growth of Cubic GaN on Pattern

Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy

✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl

High Quality Epitaxial Growth of Hexagon

High Quality Epitaxial Growth of Hexagonal GaN on Al2O3(0001) and Cubic GaN on GaAs(100) by Molecular Beam Epitaxy

✍ Kimura, R. ;Takahashi, K. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB

Heteroepitaxial Growth of GaN on 6H-SiC(

Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

✍ Waltereit, P. ;Lim, S.-H. ;McLaurin, M. ;Speck, J.S. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB

2D versus 3D Growth Mode in ZnO Layers G

2D versus 3D Growth Mode in ZnO Layers Grown by Plasma-Enhanced Molecular Beam Epitaxy on (0001) Sapphire

✍ F. Vigué; C. Deparis; P. Vennéguès; S. Vézian; M. Laügt; P. Lorenzini; C. Morhai 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 92 KB 👁 1 views

We investigated the structural, electrical, and optical properties of ZnO layers grown by plasmaenhanced molecular beam epitaxy on (0001) sapphire. Samples might be divided into two groups according to their growth mode: two-dimensional (2D) or three dimensional (3D). All the samples exhibited a col

Growth Activation of ZnO Layers with H2O

Growth Activation of ZnO Layers with H2O Vapor ona-Face of Sapphire Substrate by Metalorganic Molecular-Beam Epitaxy

✍ Ashrafi, A.B.M.A. ;Suemune, I. ;Kumano, H. ;Uesugi, K. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 1 views

H 2 O vapor-activated ZnO layers have been grown on the a-face of sapphire substrates. The grown ZnO layers revealed a crystalline orientation of c-face ZnO k a-face sapphire. For the II/VI flux ratio of 14, the ZnO layers showed a bandedge luminescence with the emission energy of 3.376 and 3.304 eV