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High Quality Epitaxial Growth of Hexagonal GaN on Al2O3(0001) and Cubic GaN on GaAs(100) by Molecular Beam Epitaxy

✍ Scribed by Kimura, R. ;Takahashi, K.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 99 KB
Volume: 180
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200007)180:1<235::aid-pssa235>3.0.co;2-z

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