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2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy

✍ Scribed by Sugihara, D. ;Kikuchi, A. ;Kusakabe, K. ;Nakamura, S. ;Toyoura, Y. ;Yamada, T. ;Kishino, K.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 184 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<323::aid-pssa323>3.0.co;2-1

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