Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy

✍ Scribed by X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 101 KB
• Volume: 228
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200111)228:1<99::aid-pssb99>3.0.co;2-2

✦ Synopsis

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of the InGaN/GaN heterostructures were achieved. Photoluminescence measurements revealed the superior optical properties of InGaN/GaN MQWs emitting from ultraviolet (388 nm) to green-yellow (528 nm) range with the In composition varying from 0.04 to 0.30. Stimulated-emission features by optical pumping were demonstrated, which implied the high-quality of the MBE-grown InGaN/GaN MQWs.