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Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

✍ Scribed by Kitamura, T. ;Suzuki, Y. ;Ishida, Y. ;Shen, X.Q. ;Nakanishi, H. ;Chichibu, S.F. ;Shimizu, M. ;Okumura, H.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 80 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:2<705::aid-pssa705>3.0.co;2-j

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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t