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Absorption and Emission of (In,Ga)N/GaN Quantum Wells Grown by Molecular Beam Epitaxy

✍ Scribed by Siozade, L. ;Disseix, P. ;Vasson, A. ;Leymarie, J. ;Damilano, B. ;Grandjean, N. ;Massies, J.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
85 KB
Volume
183
Category
Article
ISSN
0031-8965

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Growth and Characterization of InGaN/GaN
✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 101 KB πŸ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t