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Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy

โœ Scribed by Foxon, C.T. ;Novikov, S.V. ;Li, T. ;Campion, R.P. ;Winser, A.J. ;Harrison, I.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
125 KB
Volume
192
Category
Article
ISSN
0031-8965

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The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures, the lineshape is dominated by excitonic transitions and can be reasonably well fitted using the first derivative of a Gaussianbroadened osci