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On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy

✍ Scribed by Böttcher, T. ;Einfeldt, S. ;Figge, S. ;Kirchner, V. ;Heinke, H. ;Hommel, D. ;Rudloff, D. ;Riemann, T. ;Christen, J.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
150 KB
Volume
176
Category
Article
ISSN
0031-8965

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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t