Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD
β Scribed by N. Duxbury; P. Dawson; U. Bangert; E.J. Thrush; W. van der Stricht; K. Jacobs; I. Moerman
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 166 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well
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