Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam Epitaxy

✍ Scribed by Thamm, A. ;Brandt, O. ;Trampert, A. ;Ploog, K.H.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 310 KB
• Volume: 180
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200007)180:1<73::aid-pssa73>3.0.co;2-b