GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 ร 10 9 cm --2 for edge dislocations and 1 ร 1
โฆ LIBER โฆ
Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
โ Scribed by Waltereit, P. ;Lim, S.-H. ;McLaurin, M. ;Speck, J.S.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 174 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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